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Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications.
FEATURES / TYPICAL APPLICATIONS
SiC MOSFET Features:
• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, Tj(max) = +175C
• Fast and reliable body diode
• Superior avalanche ruggedness
SiC MOSFET Benefits:
• High efficiency to enable lighter/compact system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need of external Free Wheeling Diode
• Lower system cost of ownership
• PV inverter, converter and industrial motor drives